Low?Voltage Magnetoelectric Coupling in Fe <sub>0.5</sub> Rh <sub>0.5</sub> /0.68PbMg <sub>1/3</sub> Nb <sub>2/3</sub> O <sub>3</sub> ?0.32PbTiO <sub>3</sub> Thin?Film Heterostructures
نویسندگان
چکیده
The rapid development of computing applications demands novel low-energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise meeting the required voltage and power goals. Here, a route to low-voltage control magnetism in 30 nm Fe0.5Rh0.5/100 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 (PMN-PT) is demonstrated wherein coupling achieved via strain-induced changes Fe0.5Rh0.5 mediated by voltages applied PMN-PT. We describe approaches achieve high-quality, epitaxial growth on PMN-PT films and, methodology probe quantify small thin-film studies anomalous Hall effect. By comparing spin-flop field change induced temperature external voltage, coefficient estimated reach ?7 × 10?8 s m?1 at 325 K while applying ?0.75 V bias.
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ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2021
ISSN: ['1616-301X', '1616-3028']
DOI: https://doi.org/10.1002/adfm.202105068